半导体学报（英文版）2012，Vol.33Issue(11)：24-27,4.DOI:10.1088/1674-4926/33/11/113002
Low threading dislocation density in GaN films grown on patterned sapphire substrates
Low threading dislocation density in GaN films grown on patterned sapphire substrates
Liang Meng 1Wang Junxi 1Li Jinmin 1Wang Guohong 1Li Hongjian 1Li Zhicong 1Yao Ran 1Wang Bing 1Li Panpan 1Li Jing 1Yi Xiaoyan1
作者信息
- 1. Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 折叠
摘要
Abstract
The growth process of three-dimensional growth mode (3D) switching to two-dimensional growth mode (2D) is investigated when GaN films are grown on cone-shaped patterned sapphire substrates by metal-organic chemical vapor deposition.The growth condition of the 3D-2D growth process is optimized to reduce the threading dislocation density (TDD).It is found that the condition of the 3D layer is critical.The 3D layer keeps growing under the conditions of low Ⅴ/Ⅲ ratio,low temperature,and high pressure until its thickness is comparable to the height of the cone-shaped patterns.Then the 3D layer surrounds the cone-shaped patterns and has inclined side facets and a top (0001) plane.In the following 2D-growth process,inclined side facets coalesce quickly and the interaction of TDs with the side facets causes the TDs to bend over.As a result,the TDD of GaN films can decrease to 1 × 108 cm-2,giving full-width at half maximum values of 211 and 219 arcsec for (002) and (102) omega scans,respectively.关键词
threading dislocation/ GaN/ pattern sapphire substrate/ metal organic chemical vapor depositionKey words
threading dislocation/ GaN/ pattern sapphire substrate/ metal organic chemical vapor deposition引用本文复制引用
Liang Meng,Wang Junxi,Li Jinmin,Wang Guohong,Li Hongjian,Li Zhicong,Yao Ran,Wang Bing,Li Panpan,Li Jing,Yi Xiaoyan..Low threading dislocation density in GaN films grown on patterned sapphire substrates[J].半导体学报（英文版）,2012,33(11):24-27,4.
