首页|期刊导航|半导体学报（英文版）|Preparation and properties of polycrystalline silicon seed layers on graphite substrate
半导体学报（英文版）2012，Vol.33Issue(11)：28-31,4.DOI:10.1088/1674-4926/33/11/113003
Preparation and properties of polycrystalline silicon seed layers on graphite substrate
Preparation and properties of polycrystalline silicon seed layers on graphite substrate
摘要
Abstract
Polycrystalline silicon (poly-Si) seed layers were fabricated on graphite substrates by magnetron sputtering.It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700 ℃ was the critical temperature in the formation of Si (220) preferred orientation.When the substrate temperature is higher than 700 ℃,the peak intensity of X-ray diffraction (XRD) from Si (220) increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing (RTA) temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si (220) preferred orientation of poly-Si seed layers.关键词
polycrystalline silicon/ graphite/ rapid thermal annealing/ preferred orientationKey words
polycrystalline silicon/ graphite/ rapid thermal annealing/ preferred orientation引用本文复制引用
Li Ning,Chen Nuofu,Bai Yiming,He Haiyang..Preparation and properties of polycrystalline silicon seed layers on graphite substrate[J].半导体学报（英文版）,2012,33(11):28-31,4.基金项目
Project supported by the National High-Tech Research & Development Program (No.2011AA050507),the National Natural Science Foundation of China (Nos.61006150,61076051),the Natural Science Foundation of Beijing (No.2102042),and the Basic Research Operating Expenses Special Fund of Central University (No.10QG24). （No.2011AA050507）
