半导体学报（英文版）2012，Vol.33Issue(11)：32-36,5.DOI:10.1088/1674-4926/33/11/113004
Preparation of rare-earth element doped Mg2Si by FAPAS
Preparation of rare-earth element doped Mg2Si by FAPAS
摘要
Abstract
Rare-earth elements (Re) Sc and Y doped Mg2Si thermoelectric materials were made via a fieldactivated and pressure-assisted synthesis (FAPAS) method at 1023-1073 K,50 MPa for 15 min.The samples created using this method have uniform and compact structures.The average grain size was about 1.5-2μm,the micro-content of Re did not change the matrix morphology.The sample with 2500 ppm Sc obtained the best Seebeck coefficient absolute value,about 1.93 times of that belonging to non-doped Mg2Si at about 408 K.The electric conductivity of the sample doped with 2000 ppm Y becomes 1.69 times of that of pure Mg2Si at 468 K,while the former had a better comprehensive electrical performance.Their thermal conductivity was reduced to 70％ and 84％ of that of non-doped Mg2Si.Thus,the figure of merit and ZT of these two samples were enhanced visibly,which were 3.3 and 2.4 times of the non-doped samples at 408 K and 468 K,respectively.The maximal ZT belonging to samples doped with 2500 ppm Sc went up to 0.42 at about 498 K,higher than 0.40 of sample doped with 2000 ppm Y at 528 K and 0.25 of non-doped Mg2Si at 678 K,and the samples doped with Sc seemed to get the best thermoelectric performances at lower temperature.关键词
Mg2Si/ rare-earth element/ thermoelectric material/ FAPASKey words
Mg2Si/ rare-earth element/ thermoelectric material/ FAPAS引用本文复制引用
Wang Liqi,Meng Qingsen,Fan Wenhao..Preparation of rare-earth element doped Mg2Si by FAPAS[J].半导体学报（英文版）,2012,33(11):32-36,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos.50671070,50975190) and the SXSCC (No.200826). （Nos.50671070,50975190）
