半导体学报（英文版）2012，Vol.33Issue(11)：37-42,6.DOI:10.1088/1674-4926/33/11/114001
Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
摘要
Abstract
The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity,isopropanol (IPA) is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2 μm-1,4 μm-1,6 μm-1,which corresponds to SiC NW concentrations of 0.1 μg/μL,0.3μg/μL and 0.5 μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm-1.The mobility of a typical device is estimated to be 13.4 cm2/(V.s).关键词
dielectrophoresis/ SiC nanowires/ thin-film transistorsKey words
dielectrophoresis/ SiC nanowires/ thin-film transistors引用本文复制引用
Dai Zhenqing,Zhang Liying,Chen Changxin,Qian Bingjian,Xu Dong,Chen Haiyan,Wei Liangming,Zhang Yafei..Fabrication of SiC nanowire thin-film transistors using dielectrophoresis[J].半导体学报（英文版）,2012,33(11):37-42,6.基金项目
Project supported by the National Natural Science Foundation of China (Nos.50730008,60807008) and the Doctoral Fund of Hebei Normal University of Science and Technology,China (No.2009YB007). （Nos.50730008,60807008）
