首页|期刊导航|半导体学报（英文版）|A SPICE model for a phase-change memory cell based on the analytical conductivity model
半导体学报（英文版）2012，Vol.33Issue(11)：52-56,5.DOI:10.1088/1674-4926/33/11/114004
A SPICE model for a phase-change memory cell based on the analytical conductivity model
A SPICE model for a phase-change memory cell based on the analytical conductivity model
摘要
Abstract
By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate the Ⅰ-Ⅴ characteristics and the programming characteristics accurately.关键词
phase-change memory/ compact model/ analytical/ conductivityKey words
phase-change memory/ compact model/ analytical/ conductivity引用本文复制引用
Wei Yiqun,Lin Xinnan,Jia Yuchao,Cui Xiaole,He Jin,Zhang Xing..A SPICE model for a phase-change memory cell based on the analytical conductivity model[J].半导体学报（英文版）,2012,33(11):52-56,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos.61176099,61006032,60925015). （Nos.61176099,61006032,60925015）
