半导体学报（英文版）2012，Vol.33Issue(11)：121-125,5.DOI:10.1088/1674-4926/33/11/115012
A micro-power LDO with piecewise voltage foldback current limit protection
A micro-power LDO with piecewise voltage foldback current limit protection
摘要
Abstract
To achieve a constant current limit,low power consumption and high driving capability,a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented.The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA.To increase the loop stability of the proposed LDO,a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole,and a zero is designed for the purpose of the second pole phase compensation.The proposed LDO is fabricated in a BiCMOS process.The measurement results show that the short-circuit current of the LDO is 190 mA,the constant limit current under a high drop-out voltage is 440 mA,and the maximum load current under a low drop-out voltage is up to 800 mA.In addition,the quiescent current of the LDO is only 7 μA,the load regulation is about 0.56％ on full scale,the line regulation is about 0.012％/V,the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA.关键词
power protection/ voltage foldback/ current limit/ micro-power/ LDOKey words
power protection/ voltage foldback/ current limit/ micro-power/ LDO引用本文复制引用
Wei Hailong,Liu Youbao,Guo Zhongjie,Liao Xue..A micro-power LDO with piecewise voltage foldback current limit protection[J].半导体学报（英文版）,2012,33(11):121-125,5.基金项目
Project supported by the Ministerial "12th Five-Year" Pre-Research Fund of China (No.413080203). （No.413080203）
