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High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter

Wang Wei Sun Hao Teng Teng Sun Xiaowei

半导体学报（英文版）2012，Vol.33Issue(12)：23-26,4.

半导体学报（英文版）2012，Vol.33Issue(12)：23-26,4.DOI:10.1088/1674-4926/33/12/124002

High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter

Wang Wei ¹Sun Hao ²Teng Teng ¹Sun Xiaowei¹

作者信息

1. Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100039, China
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摘要

Abstract

An In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) with a high doping emitter is designed and fabricated using air bridge technology.The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature,with a peak current density of 24 kA/cm2.The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit.The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.

关键词

resonant tunneling diode/ I-V characteristics/ peak-to-valley current ratio/ equivalent circuit/S-parameters

Key words

resonant tunneling diode/ I-V characteristics/ peak-to-valley current ratio/ equivalent circuit/S-parameters

引用本文复制引用

Wang Wei,Sun Hao,Teng Teng,Sun Xiaowei..High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter[J].半导体学报（英文版）,2012,33(12):23-26,4.

基金项目

Project supported by the National Fundamental Research Program of China (No.2009CB320207). （No.2009CB320207）

半导体学报（英文版）

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ISSN：1674-4926

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