首页|期刊导航|半导体学报（英文版）|Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
半导体学报（英文版）2012，Vol.33Issue(12)：27-30,4.DOI:10.1088/1674-4926/33/12/124003
Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
摘要
Abstract
A model of subthreshold characteristics for both undoped and doped double-gate (DG) MOSFETs has been proposed.The models were developed based on solution of 2-D Poisson's equation using variable separation technique.Without any fitting parameters,our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length.Also,design parameters such as body thickness,gate oxide thickness and body doping concentrations can be directly reflected from our models.The models have been verified by comparing with device simulations' results and found very good agreement.关键词
double-gate/ MOSFETs/ deep nanoscale/ modelingKey words
double-gate/ MOSFETs/ deep nanoscale/ modeling引用本文复制引用
Jin Xiaoshi,Liu Xi,Wu Meile,Chuai Rongyan,Jung-Hee Lee,Jong-Ho Lee..Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs[J].半导体学报（英文版）,2012,33(12):27-30,4.基金项目
Project supported by the Fund of Liaoning Province Education Department (No.L2012028). （No.L2012028）
