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首页|期刊导航|半导体学报(英文版)|A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

Yang Geliang Wang Zhigong Li Zhiqun Li Qin Li Zhu Liu Faen

半导体学报(英文版)2012,Vol.33Issue(12):112-117,6.
半导体学报(英文版)2012,Vol.33Issue(12):112-117,6.DOI:10.1088/1674-4926/33/12/125011

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

Yang Geliang 1Wang Zhigong 1Li Zhiqun 1Li Qin 1Li Zhu 1Liu Faen1

作者信息

  • 1. Institute of RF-& OE-ICs, Southeast University, Nanjing 210096, China
  • 折叠

摘要

Abstract

A CMOS low-noise amplifier (LNA) operating at 31.7 GHz with a low input return loss (S11) and high linearity is proposed.The wideband input matching was achieved by employing a simple LC compounded network to generate more than one S11 dip below-10 dB level.The principle of the matching circuit is analyzed and the critical factors with significant effect on the input impedance (Zin) are determined.The relationship between the input impedance and the load configuration is explored in depth,which is seldom concentrated upon previously.In addition,the noise of the input stage is modeled using a cascading matrix instead of conventional noise theory.In this way Zin and the noise figure can be calculated using one uniform formula.The linearity analysis is also performed in this paper.Finally,an LNA was designed for demonstration purposes.The measurement results show that the proposed LNA achieves a maximum power gain of 9.7 dB and an input return loss of <-10 dB from 29 GHz to an elevated frequency limited by the measuring range.The measured input-referred compression point and the third order inter-modulation point are-7.8 and 5.8 dBm,respectively.The LNA is fabricated in a 90-nm RF CMOS process and occupies an area of 755 × 670 μm2 including pads.The whole circuit dissipates a DC power of 24 mW from one 1.3-V supply.

关键词

CMOS/ low noise amplifier/ input matching/ millimeter-wave

Key words

CMOS/ low noise amplifier/ input matching/ millimeter-wave

引用本文复制引用

Yang Geliang,Wang Zhigong,Li Zhiqun,Li Qin,Li Zhu,Liu Faen..A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique[J].半导体学报(英文版),2012,33(12):112-117,6.

基金项目

Project supported by the National Basic Research Program of China (No.2010CB327404),the National High Technology Research and Development Program of China (No.2011AA10305),and the International Cooperation Projects in Science and Technology,China (No.2011DFA11310). (No.2010CB327404)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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