成都大学学报：自然科学版2012，Vol.31Issue(4)：324-326,3.
砷化镓光导开关中流注自发辐射实验的理论分析
Theoretical Analysis of Streamer Radiation in GaAs Photoconductive Semiconductor Switches (PCSS)
摘要
Abstract
The spontaneous radiative phenomenon of different wavelength of radiation at one end of a stre- amer (i. e. current filament) in high gain GaAs photoconductive semiconductor switches (PCSS) was ana- lyzed. The relationship among radiative recombination coefficients of different radiative wavelengths was in- duced. And the mathematical model of spontaneous radiation of current filament with the change of current filament was expanded. The results show that the other intensity peaks of spontaneous radiation of the stre- amer are slightly less than the spontaneous radiation intensity of 890nm when the filament currents are the same .关键词
砷化镓光导开关/电流丝/辐射复合系数/辐射强度Key words
GaAs photoconductive semiconductor switch (PCSS)/current filament/radiative recombination coefficient/radiative intensity分类
信息技术与安全科学引用本文复制引用
刘鸿,郑理,杨洪军,杨维,郑勇林..砷化镓光导开关中流注自发辐射实验的理论分析[J].成都大学学报：自然科学版,2012,31(4):324-326,3.基金项目
四川省科技厅基础应用研究计划（2010JY0160）资助项目. （）
