材料科学与工程学报2012，Vol.30Issue(6)：853-857,5.
高密度、直立金属纳米线有序阵列的制备
Preparation of High-density and Free-standing Metal Nanowire Arrays
孙秀玉 1李宗木 2薛莉 1成英之1
作者信息
- 1. 山东理工大学化学工程学院,山东淄博255049
- 2. 淄博职业学院化工系,山东淄博255314
- 折叠
摘要
Abstract
Free-standing nanowire arrays were fabricated by a simple and controllable method. Metal nanowire arrays of Cu, Ag and Au were electrodeposited using cyclic voltammetry with assistance of anodic aluminum oxide template. Scanning electron microscope (SEM) results demonstrated that the percentage of pore filling was very high. X-ray diffraction (XRD) patterns of metal nanowries were indexed to face-centered cubic structure. Aspect ratio of nanowire arrays can be tuned by changing the electrodeposition time in cyclic voltammetry. After the template was removed, the nanowire arrays with a high aspect ratio normally collapse into an entangled mess. While the high density and free-standing nanowire arrays can be easily obtained on the conductive substrate when the aspect ratio of nanowire is in a range.关键词
循环伏安法/氧化铝模板/纳米线阵列Key words
cyclic voltammetry/anodic aluminum oxide template/nanowire arrays分类
通用工业技术引用本文复制引用
孙秀玉,李宗木,薛莉,成英之..高密度、直立金属纳米线有序阵列的制备[J].材料科学与工程学报,2012,30(6):853-857,5.
