发光学报2012，Vol.33Issue(12)：1324-1328,5.DOI:10.3788/fgxb20123312.1324
倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进
Improvement of Performance for CdSe Quantum Dot LEDs by Using An Inverted Device Structure and Localized Surface Plasmon Resonance
摘要
Abstract
The improvement of the performance for CdSe quantum dot light emitting diodes ( QD-LEDs) was studied by using the inverted device structure and localized surface plasmon resonant (LSPR) coupling of Au nanoparticles with the QDs. We fabricated inverted QD-LEDs with TiO2 as the electron injection/transport layer. The current density-voltage characteristics of electron-only device were studied. The electron-injection current from the top Al electrode with the forward-bias voltage (Al was used as the cathode) was symmetrical with that of the bottom ITO electrode with reverse-bias voltage (ITO was used as the cathode), indicating the electron injection from ITO to TiO2 is facilitated like the case from Al cathode. It was noticed that the efficiency of QD-LEDs with Au nanoparticles was enhanced while the drop rate of the efficiency was clearly reduced with increasing the current density. A significant enhancement of 42% for current efficiency of the LEDs was achieved under high current density of 200 mA/cm.关键词
量子点/电致发光/倒置量子点LED/金属纳米粒子Key words
quantum dot/ electroluminescence/ inverted quantum dot LED/ metal nanoparticle分类
数理科学引用本文复制引用
陈肖慧,赵家龙..倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进[J].发光学报,2012,33(12):1324-1328,5.基金项目
国家自然科学基金(11274304)资助项目 （11274304）
