红外与毫米波学报2012,Vol.31Issue(6):497-500,4.DOI:10.3724/SP.J.1010.2012.00497
同时模式的中波/长波碲镉汞双色红外探测器
Simultaneous mode MW/LW two color HgCdTe infrared detector
摘要
Abstract
The results of simultaneous-mode 128 x 128 MW/LW two-color HgCdTe Infrared detector was presented in this paper. The photoresist (PR) spray-coating technology was developed to open the windows of non-planar implantation and metallization of two-color HgCdTe infrared detector. By etching to expose the n-type implantation-region of MW photodi-odes, non-planar B+-implantation of MW photodiodes and LW photodiodes synchronously, side-wall passivation, side-wall metallization and flip-chip hybridization with Readout Integrated Circuit (ROIC), 128 × 128 MW/LW two-color HgCdTe Infrared detector was achieved from a triple-layer p3-p2-P1 hetero-junction Hg1-χCdχTe film grown by molecular beam epitaxy. At liquid nitrogen temperature, the cut-off wavelengths of the simultaneous-mode MW/LW two-color Infrared detector were 5. L|xm and 10.1 μm individually, and the peak detectivities (Dλp *) were 2.02 × 1011 cmHz1/2/W and 3.10 × 1010 cmHz1/2/W respectively. Also the spectral cross-talks of MW-to-LW and LW-to-MW were suppressed to only 3. 8% and 4.4% by optimizing the chip structure of the simultaneous-mode two-color infrared detector.关键词
HgCdTe/中波/长波双色/同时模式/光谱串音Key words
HgCdTe/ MW/LW two-color/ simultaneous mode/ spectral crosstalk分类
信息技术与安全科学引用本文复制引用
叶振华,何力,李杨,胡伟达,陈路,廖亲君,陈洪雷,林春,胡晓宁,丁瑞军..同时模式的中波/长波碲镉汞双色红外探测器[J].红外与毫米波学报,2012,31(6):497-500,4.基金项目
国家自然科学基金(6070612) (6070612)
中国科学院国防科技创新基金(cxjj-10-m29) (cxjj-10-m29)