红外与毫米波学报2012，Vol.31Issue(6)：501-504,4.DOI:10.3724/SP.J.1010.2012.00501
128×128元InAs/GaSb Ⅱ类超晶格红外焦平面探测器
128 × 128 infrared focal plane arrays based on Type-Ⅱ InAs/GaSb superlattice
摘要
Abstract
In this paper, we reported the growth and fabrication of a 128 × 128 infrared focal plane array detector made of type-Ⅱ InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm ×40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 trn, and a peak detectivity of 6.0 × 109 cmHz1/2 W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.关键词
长波红外探测器/InAs/GaSb Ⅱ类超晶格/焦平面阵列Key words
long-wave infrared detector/InAs/GaSb superlattice/focal plane array分类
信息技术与安全科学引用本文复制引用
许佳佳,何力,金巨鹏,徐庆庆,徐志成,靳川,周易,陈洪雷,林春,陈建新..128×128元InAs/GaSb Ⅱ类超晶格红外焦平面探测器[J].红外与毫米波学报,2012,31(6):501-504,4.基金项目
国家自然科学基金(61176082) （61176082）
