吉林大学学报（理学版）2012，Vol.50Issue(6)：1247-1251,5.
6H-SiC衬底上InN单晶薄膜的RF-MBE生长
InN Films Grown on 6H-SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy
摘要
Abstract
The growth of wurtzite indium nitride (InN) films was investigated by means of radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) on 6H-SiC substrates. In-situ X-ray photoelectron spectra were used to determine the Wagner plot of InN. The auger parameter α' is 852. 76 eV. The mass radio of In to N in InN is 1.19; the sample surface of InN/6H-SiC, observed by an scanning electron microscope and atomic force microscope, is reticular structure without indium droplets; X-ray diffraction results show that the films have a preferential c-axis orientation normal to the substrate surface, FWHM of InN (0002) rocking curve is 32. 6 arcmin; and the room temperature photoluminescence peak is at about 1 575 nm.关键词
分子束外延/氮化铟/碳化硅/光电子能谱/X射线衍射/光致发光Key words
molecular beam epitaxy/ InN/ 6H-SiC/ photoelectron spectra/ X-ray diffraction/ photoluminescence分类
通用工业技术引用本文复制引用
沈春生,吴国光,高福斌,马艳,杜国同,李万程..6H-SiC衬底上InN单晶薄膜的RF-MBE生长[J].吉林大学学报（理学版）,2012,50(6):1247-1251,5.基金项目
国家自然科学基金(批准号:60877020 （）
60976010). （）
