无机材料学报2012，Vol.27Issue(11)：1211-1215,5.DOI:10.3724/SP.J.1077.2012.12027
CdSe胶质量子点的电致发光特性研究
Electroluminescent Characteristics of CdSe Colloidal Quantum Dots
摘要
Abstract
Electroluminescent (EL) devices with an ITO/ZnS/CdSe/ZnS/Al structure were fabricated using chemically synthesized colloidal CdSe quantum dots (QDs) as active layer. The size of the CdSe QDs is about 4.3 nm measured by a transmission electron microscope. Scanning electron microscope characterization shows smooth surfaces of ZnS layers and Al electrodes. CdSe (111) and ZnS (111) diffraction peaks are observed in the X-ray diffraction patterns, verifying the incorporation of CdSe QDs and ZnS insulator materials in the devices. Room temperature photoluminescence (PL) spectra reveal that the CdSe QDs' emission peak is located at 614 nm. EL measurements at room temperature show a broad emission band ranging from 450 nm to 850 nm with a peak wavelength located at about 800 nm. Finally, the light emitting mechanism for the EL devices is proposed and the discrepancy between PL and EL spectra is interpreted.关键词
CdSe/量子点/电致发光/光致发光Key words
CdSe/ quantum dots/ electroluminescence/ photoluminescence分类
数理科学引用本文复制引用
楼腾刚,胡炼,吴东锴,杜凌霄,蔡春锋,斯剑霄,吴惠桢..CdSe胶质量子点的电致发光特性研究[J].无机材料学报,2012,27(11):1211-1215,5.基金项目
国家自然科学基金(10974174,91021020) （10974174,91021020）
浙江省自然科学基金项目(Z6100117,Y1110563) （Z6100117,Y1110563）
