信息与电子工程2012，Vol.10Issue(6)：748-753,6.
半导体器件辐射效应研究
Research trends of radiation effects in semiconductor device
刘忠立1
作者信息
- 1. 中科院微电子研究所,北京100029;中科院半导体研究所,北京100083
- 折叠
摘要
Abstract
Basing on the retrospect for rich research fruits of radiation effects in semiconductor device, this paper introduces some research trends of radiation effects in semiconductor devices, such as single event effects in avionics and on the ground, radiation effects in synthetic radiation environments, single event effects in compound semiconductor devices, radiation effects in photoelectric devices, radiation effects in power semiconductor devices, radiation effects in Silicon on Insulator(SOI) CMOS integrated circuits and design techniques of radiation hardening for mixed-signal circuits. Some typical research results are given and some research directions which should be continued also are pointed out.关键词
半导体器件/抗辐射加固/研究动向Key words
semiconductor device/ radiation hardening/ research trends分类
信息技术与安全科学引用本文复制引用
刘忠立..半导体器件辐射效应研究[J].信息与电子工程,2012,10(6):748-753,6.
