半导体学报（英文版）2013，Vol.34Issue(1)：28-34,7.DOI:10.1088/1674-4926/34/1/014002
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors
Han Zhongfang 1Ru Guoping 1Ruan Gang1
作者信息
- 1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
- 折叠
摘要
Abstract
Subthreshold characteristics of vertical tunneling field effect transistors (VTFETs) with an n+-pocket in the p+-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the n+ pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.关键词
tunneling field effect transistor/metal-oxide-semiconductor field effect transistor/subthreshold swingKey words
tunneling field effect transistor/metal-oxide-semiconductor field effect transistor/subthreshold swing引用本文复制引用
Han Zhongfang,Ru Guoping,Ruan Gang..Analysis of the subthreshold characteristics of vertical tunneling field effect transistors[J].半导体学报（英文版）,2013,34(1):28-34,7.
