首页|期刊导航|半导体学报（英文版）|Electronic structures and optical properties of a SiC nanotube with vacancy defects
半导体学报（英文版）2013，Vol.34Issue(2)：1-5,5.DOI:10.1088/1674-4926/34/2/022001
Electronic structures and optical properties of a SiC nanotube with vacancy defects
Electronic structures and optical properties of a SiC nanotube with vacancy defects
摘要
Abstract
Based on first-principle calculations,the electronic structures and optical properties of a single-walled (7,0) SiC nanotube (SiCNT) with a carbon vacancy defect or a silicon vacancy defect are investigated.In the three silicon atoms around the carbon vacancy,two atoms form a stable bond and the other is a dangling bond.A similar structure is found in the nanotube with a silicon vacancy.A carbon vacancy results in a defect level near the top of the valence band,while a silicon vacancy leads to the formation of three defect levels in the band gap of the nanotube.Transitions between defect levels and energy levels near the bottom of the conduction band have a close relationship with the formation of the novel dielectric peaks in the lower energy range of the dielectric function.关键词
SiC nanotube/ vacancy defect/ first-principles study/ electronic structures/ optical propertiesKey words
SiC nanotube/ vacancy defect/ first-principles study/ electronic structures/ optical properties引用本文复制引用
Song Jiuxu,Yang Yintang,Wang Ping,Guo Lixin,Zhang Zhiyong..Electronic structures and optical properties of a SiC nanotube with vacancy defects[J].半导体学报（英文版）,2013,34(2):1-5,5.基金项目
Project supported by the China Postdoctoral Science Foundation (No.201104619) and the Fund of Shaanxi Provincial Educational Department (No.2010JK775). （No.201104619）
