首页|期刊导航|半导体学报（英文版）|Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
半导体学报（英文版）2013，Vol.34Issue(2)：37-40,4.DOI:10.1088/1674-4926/34/2/024003
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
摘要
Abstract
The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated.It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current.Therefore,a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier.Consequently,the gate forward leakage current shrinks.Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment.In addition,the DC characteristics of the HEMT device with plasma treatment have been studied.关键词
fluorine-plasma surface treatment/ AlGaN/GaN HEMTs/ leakage currentKey words
fluorine-plasma surface treatment/ AlGaN/GaN HEMTs/ leakage current引用本文复制引用
Chen Wanjun,Zhang Jing,Zhang Bo,Chen Kevin Jing..Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs[J].半导体学报（英文版）,2013,34(2):37-40,4.基金项目
Project supported by the National Natural Science Foundation of China (No.60906037) and the Research Fund for the Doctoral Program of Higher Education of China (No.20090185120021). （No.60906037）
