半导体学报（英文版）2013，Vol.34Issue(2)：67-71,5.DOI:10.1088/1674-4926/34/2/025002
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
摘要
Abstract
This paper presents design and implementation of a dual-band LNA using a 0.35 μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications.PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic (EM) simulation.Design considerations of noise decoupling,input/output impedance matching,and current reuse are described in detail.At 0.9/2.4 GHz,gain and noise figure are 13/16 dB and 4.2/3.9 dB,respectively.Both S11 and S22 are below-10 dB.Power dissipation is 40 mW at 3.5 V supply.关键词
current reuse/ dual-band/ emitter inductor/ EM simulation/ SiGe HBTKey words
current reuse/ dual-band/ emitter inductor/ EM simulation/ SiGe HBT引用本文复制引用
Lu Zhiyi,Xie Hongyun,Huo Wenjuan,Zhang Wanrong..0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA[J].半导体学报（英文版）,2013,34(2):67-71,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos.61006044,60776051,61006059),the Beijing Municipal Natural Science Foundation,China (Nos.4122014,4082007),the Beijing Municipal Education Committee,China (Nos.KM200910005001,KM20070005015),and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality. （Nos.61006044,60776051,61006059）
