发光学报2012，Vol.33Issue(10)：1084-1088,5.DOI:10.3788/fgxb20123310.1084
外延在蓝宝石衬底上的非掺杂GaN研究
Investigation of Non-doped GaN Grown on Sapphire Substrate
摘要
Abstract
GaN thin films were prepared by changing the growth condition. The epitaxial layers were grown by metal-organic vapor phase epitaxy on sapphire (0001) substrates, and were characterized by photoluminescence, optical microscope and X-ray double crystal diffraction. In the experiment, we used full width at half maximum of X-ray double crystal diffraction to detect the dislocation density, and found the samples dislocation density was lowest when TMGa flows at 70 cmVmin. Using the best value of TMGa flows, we grew the samples by changing the growth temperature. Photoluminescence spectra showed that higher growth temperature is conducive to improve the optical properties , reduce the Ga vacancies density in the GaN samples, and improve the quality of GaN crystal. Optical microscope test indicated that the increasing of the growth temperature will improve the surface morphology, it gives the same conclusion with photoluminescence spectra test.关键词
金属有机物化学气相沉积(MOCVD)/非掺杂氮化镓(GaN)/X射线双晶衍射(DCXRD)/光致荧光(PL)光谱Key words
metal-organic chemical vapor deposition( MOCVD) / non-doped GaN/ double-crstal X-ray diffraction/ photoluminescence spectra分类
数理科学引用本文复制引用
李影智,邢艳辉,韩军,陈翔,邓旭光,徐晨..外延在蓝宝石衬底上的非掺杂GaN研究[J].发光学报,2012,33(10):1084-1088,5.基金项目
国家高技术研究发展计划(863计划)(2008AA03Z402) （863计划）
北京市自然科学基金(4102003,4112006,4092007) （4102003,4112006,4092007）
国家自然科学基金(61204011,61107026)资助项目 （61204011,61107026）
