发光学报2012，Vol.33Issue(10)：1149-1152,4.DOI:10.3788/fgxb20123310.1149
射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管
Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering
摘要
Abstract
The indium gallium zinc oxide (IGZO) thin films were fabricated by RF magnetron sputtering at room temperature in this paper. The crystal structure, surface morphology, and optical electrical of the IGZO films were investigated by X-ray diffraction ( XRD) , atom force microscopy (AFM) , and photometry, respectively. The results revealed that the IGZO film was amorphous, the surface of the films was uniform and smooth. A good optical transmittance of over 80% was obtained in the visible light. The IGZO thin film transistors were successfully fabricated at low temperature ( < 200℃ ) using the room temperature sputtering IGZO thin film as the active layer. The field effect mobility of a-IGZO TFT was larger than 6. 0 cm2 · V-1·s-1. The device's on/off ratio was 10~7, threshold voltage was 1.2 V and subthreshold voltage swing is 0.9 V/ dec. Constant bias stress testing showed that the a-IGZO TFT threshold voltage exhibited positive shifts as time increased.关键词
非晶铟镓锌氧薄膜/薄膜晶体管/场效应迁移率Key words
amorphous indium gallium zinc oxide thin film/ thin film transistor/ field effect mobility分类
信息技术与安全科学引用本文复制引用
信恩龙,李喜峰,陈龙龙,石继锋,李春亚,张建华..射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管[J].发光学报,2012,33(10):1149-1152,4.基金项目
国家自然科学基金(61006005) （61006005）
上海市科学技术委员会项目(10dz1100102)资助项目 （10dz1100102）
