发光学报2013，Vol.34Issue(1)：82-86,5.DOI:10.3788/fgxb20133401.0082
MOCVD法生长Ga、P掺杂的ZnO薄膜
Ga-doped and P-doped ZnO Films Grown by MOCVD
摘要
Abstract
were separately prepared on A12O3 substrates by metal organic chemical vapor deposition (MOCVD) method. The microstructure, electrical and optical properties were studied by X-ray diffraction (XRD) , scanning electron microscopy, Hall effect measurement, the room temperature photolumi-nescence (PL) spectrum, respectively. The n-type ZnO films with a carrier concentration of 1 x 1019 cm-3 and p-type films with carrier concentration of 1. 66 x 1016 cm-3 were obtained. SEM images showed the films had highly oriented columnar structure. PL spectrum displayed p-type ZnO films showed good optical qualities.关键词
MOCVD/ZnO薄膜/Ga、P掺杂Key words
MOCVD/ ZnO films/ Ga-doped/ P-doped分类
数理科学引用本文复制引用
殷伟,张金香,崔夕军,赵旺,王辉,史志峰,董鑫,张宝林,杜国同..MOCVD法生长Ga、P掺杂的ZnO薄膜[J].发光学报,2013,34(1):82-86,5.基金项目
国家"973"计划第五课题(2011CB302005,61076045,61006006)资助项目 （2011CB302005,61076045,61006006）
