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p型CuInS2花状微球的液相可控合成及其电学性能表征

吴义良 周国方 王文坚 张梓晗 吴春艳

发光学报2013,Vol.34Issue(2):154-159,6.
发光学报2013,Vol.34Issue(2):154-159,6.DOI:10.3788/fgxb20133402.0154

p型CuInS2花状微球的液相可控合成及其电学性能表征

Solution-based Controllable Synthesis of p-type CuInS2 Flower-like Microspheres and Their Electrical Characterization

吴义良 1周国方 1王文坚 1张梓晗 1吴春艳1

作者信息

  • 1. 合肥工业大学电子科学与应用物理学院,安徽合肥230009
  • 折叠

摘要

Abstract

Tetragonal CuInS2 flower-like microspheres were successfully synthesized through the sol-vothermal reaction in ethylene glycol (EG) with the assistance of cationic surfactant cetyltrimethyl-ammonium bromide ( CTAB). The morphology, structure and composition of the products were characterized by X-ray diffraction ( XRD) , scanning electron microscope ( SEM ) , photoelectron spectroscopy (XPS) and UV-Vis spectroscopy, respectively. XRD spectra showed that the lowest temperature for the synthesis of pure CuInS2 was 200 ℃. CuInS2 microspheres obtained at the temperature 200 ℃ and 220 ℃ were verified to be Cu-rich and In-rich, respectively. UV-Vis spectrum showed that there existed intensity absorption in the visible region for CuInS2 microspheres obtained at 200℃. The band gap was estimated to be ~ 1. 62 eV, which is very close to that of bulk CuInS2. Back-gate field effect transistor based on CuInS2 microspheres obtained at 200 ℃ was constructed and their electrical characterizations indicated that as-prepared CuInS2 microspheres were p-type semiconductor with conductivity of ~ 2 S·cm-1 , which is similar to that of p-type CuInS2 films. As-prepared CuInS2 microspheres showed their potential application in the fields of low-cost and high-performance photovoltaic devices.

关键词

CuInS2/微球/场效应器件/光伏器件

Key words

CuInS2/ microspheres/ field effect transistor (FET) / photovoltaic devices

分类

化学化工

引用本文复制引用

吴义良,周国方,王文坚,张梓晗,吴春艳..p型CuInS2花状微球的液相可控合成及其电学性能表征[J].发光学报,2013,34(2):154-159,6.

基金项目

国家自然科学基金青年基金(20901021)资助项目 (20901021)

发光学报

OA北大核心CSCDCSTPCD

1000-7032

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