高电压技术2013，Vol.39Issue(2)：505-512,8.DOI:10.3969/j.issn.1003-6520.2013.02.035
基于电路拓扑的IGBT并联均流方法
Paralleling Current Sharing Method of Parallel IGBTs Based on Circuit Topology
摘要
Abstract
The technology of insulated gate bipolar transistors (IGBT) paralleling has become one of solutions for high-power design applications. To solve problems of current measures of IGBTs paralleling, by analyzing the effects of applied inductance on dynamic and static current sharing, we proposed a method for current current sharing of parallel IGBTs based on circuit topology, by which an additional diode on DC level and two μH level inductance were required, the open switching loss was reduced, the dead zone did not need to set, and short circuit protection was easy to implement. In accordance with the issue of the rise of second spike of overvoltage which brought by the method when IGBT turned off, we proposed an improved circuit topology to solve the issue by an additional CDC networks. The correctness, effectiveness and feasibility of the method are verified by the experimental results, and provide a better option for the capacity expansion of high-power electronic converter.关键词
绝缘栅双极晶体管(IGBT)/并联均流/动态均流/静态均流/电路拓扑/试验验证Key words
insulated gate bipolar transistors (IGBT)/ paralleling current sharing/ dynamic current sharing/ static current sharing/ circuit topology/ experimental verification引用本文复制引用
张成,孙驰,马伟明,艾胜..基于电路拓扑的IGBT并联均流方法[J].高电压技术,2013,39(2):505-512,8.基金项目
国家自然科学基金(50737004ZD （）
51177170). （）
