高技术通讯2012，Vol.22Issue(10)：1070-1076,7.DOI:10.3772/j.issn.1002-0470.2012.10.011
基于Darlington Cascode结构的SiGe异质结双极晶体管UWB低噪声放大器的设计
Design of SiGe HBT UWB low noise amplifier based on darlington cascode structure
摘要
Abstract
Based on the Taiwan Semiconductor Manufactory Company (TSMC)' s 0.35μm silicon germanium (SiGe) process, an inductorless, small chip area SiGe heterojunction bipolar transistor (HBT) low-noise amplifier (LNA) for Ultra-wideband (UWB) application was designed.The input impedance matching and the output impedance matching of the LNA are both achieved by using the resistance feedback structure instead of the LC matching network structure in order to save the chip area.And the LNA uses the Darlington-Cascode structure as its output stage to improve its gain and linearity because the structure has the advantage of high linearity of Cascode and the advantage of high gain of Darlington.The Darlington-Cascode structure was constructed based on the analysis of the linearity and 3-dB bandwidth of Cascode.The topology and the chip layout of the LNA were designed, with its area being only 0.046mm2.The simulation results of the LNA demonstrate that in the range of UWB, the gain of a LNA is 19.5~20 dB, the gain flatness is ±0.25dB, the linearity is -5 ~ -2dBm, with the satisfactory input impedance matching and the output impedance matching.The LNA is unconditionally stable in the whole band.关键词
低噪声放大器(LNA)/SiGe异质结双极晶体管(HBT)/电阻反馈/线性度/共射-共基放大器Key words
low noise amplifier (LNA) , SiGe heterojunction bipolar transistor (HBT) , resistance feedback, linearity, Cascode引用本文复制引用
丁春宝,郭振杰,张万荣,金冬月,谢红云,陈亮,沈佩,张东晖,刘波宇,周永强..基于Darlington Cascode结构的SiGe异质结双极晶体管UWB低噪声放大器的设计[J].高技术通讯,2012,22(10):1070-1076,7.基金项目
国家自然科学基金(60776051,61006044,61006059)和北京市自然科学基金(4082007,4122014)资助项目. （60776051,61006044,61006059）
