强激光与粒子束2013，Vol.25Issue(2)：505-507,3.DOI:10.3788/HPLPB20132502.0505
2.0μm波段Sb基多量子阱材料的制备
Fabrication of 2.0 μm Sb-based multi-quantum-well materials
摘要
Abstract
This paper studies parameters of InGaAsSb/AlGaAsSb multi-quantum-well (MQW) materials grown by molecular beam epitaxy(MBE), including the growth rate, growth temperature and flux for high quality MQW materials, respectively. As well, characterization of the epi-layers by X-ray diffraction (XRD) indicates high uniformity and excellent crystalline quality with satellite peaks. Emitting wavelength is about 2. 0μm measured by photoluminescence(PL) at room temperature (RT). The excellent crystalline quality and optical characteristic are obtained through optimization of growth conditions and structure parameters. The threshold current of the fabricated device is about 300 mA, the output power is 22 mW at room temperature.关键词
多量子阱/分子束外延/中红外波段Key words
multiple-quantum-well/ molecular beam epitaxy/ mid-infrared分类
数理科学引用本文复制引用
李占国,尤明慧,邓昀,刘国军,李林,高欣,曲轶,王晓华..2.0μm波段Sb基多量子阱材料的制备[J].强激光与粒子束,2013,25(2):505-507,3.基金项目
国家自然科学基金项目(61006039,60976056) （61006039,60976056）
总装预研基金项目(232760) （232760）
