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衬底温度对MOCVD-ZnO薄膜特性的影响

孙小虎 雷青松 曾祥斌 薛俊明 鞠洪超 陈阳洋

人工晶体学报2012,Vol.41Issue(6):1494-1497,4.
人工晶体学报2012,Vol.41Issue(6):1494-1497,4.

衬底温度对MOCVD-ZnO薄膜特性的影响

Influence of Substrate Temperature on the Properties of ZnO Thin Films Grown by MOCVD Technique

孙小虎 1雷青松 1曾祥斌 1薛俊明 2鞠洪超 2陈阳洋1

作者信息

  • 1. 华中科技大学电子科学与技术系,武汉430074
  • 2. 河北汉盛光电科技有限公司,衡水053000
  • 折叠

摘要

Abstract

Microstructural, electrical and optical properties of updoped-ZnO films grown by metal organic chemical vapor deposition at different substrate temperature were investigated. The results indicated that the substrate temperature plays an very important role on the properties of ZnO films. Textured ZnO thin film with a low resistivity (2. 17 × 10-2 Ω·cm) and a high average transparency ( 〉 85%) was obtained at the temperature of 180 ℃. By further optimizing the structure and B-doped ZnO film as front electrode will be applied in solar cell soon.

关键词

MOCVD/绒面ZnO薄膜/衬底温度/太阳电池

Key words

MOCVD/ textured ZnO thin film/ substrate temperature/ solar cells

分类

数理科学

引用本文复制引用

孙小虎,雷青松,曾祥斌,薛俊明,鞠洪超,陈阳洋..衬底温度对MOCVD-ZnO薄膜特性的影响[J].人工晶体学报,2012,41(6):1494-1497,4.

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