人工晶体学报2012，Vol.41Issue(6)：1757-1761,5.
AIC多晶硅薄膜的制备与其上HWCVD低温外延生长多晶硅薄膜的研究
Investigation on Preparation of Polycrystalline Silicon by AIC and Epitaxial Growth of Polycrystalline Silicon by HWCVD at Low Temperature
摘要
Abstract
Aluminum induced crystallization ( AIC) is an important method to prepare polycrystalline silicon (poly-Si) at low temperature. In this paper, high quality aluminum induced crystalline silicon was prepared from glass/aluminum/alumina/amorphous (Al/Al2O3/a-Si) stack and glass/amorphous/ silicate/aluminum (a-Si/SiOx/Al) stack, respectively. The SEM of the films show that the poly-Si from Al/Al2O3/a-Si stack was very rough, and the other was smooth. The AIC poly-Si films from a-Si/SiOx/ Al stacks were used as seeding layer to epitaxially grow high crystalline quality poly-Si films at 300 ℃ temperature by HWCVD. The mechanism of the difference of the surface topography between the poly-Si from the two stacks was discussed. During the AIC process, the mixture layer of poly-Si, a-Si and Al was formed in the original a-Si layer. After aluminum was etched, the residual silicon surface becomes rough. And continuous high quality poly-Si was formed in the original Al layer. The top layers of Al/Al2O3/a-Si and a-Si/SiOx/Al stacks were a-Si and Al respectively. After layer exchange process, the top layer of the former is silicon and aluminum mixture, so the surface is rough. On the other hand, the top layer of the latter is continuous poly-Si, so the surface is smooth. The epitaxial growth of poly-Si on AIC poly-Si surface is equivalent to the AIC silicon nucleus'continuously growing at vertical direction of the film.关键词
多晶硅薄膜/铝诱导晶化/热丝化学气相沉积/外延生长Key words
polycrystalline silicon thin film/ aluminum-induced crystallization/ hot wire chemical vapor deposition/ epitaxial growth分类
数理科学引用本文复制引用
唐正霞,沈鸿烈,江丰,张磊..AIC多晶硅薄膜的制备与其上HWCVD低温外延生长多晶硅薄膜的研究[J].人工晶体学报,2012,41(6):1757-1761,5.基金项目
国家自然科学基金项目(61176062) （61176062）
江苏省优势学科资助项目 （）
金陵科技学院博士启动基金(jit-b-201206) （jit-b-201206）
