人工晶体学报2013，Vol.42Issue(1)：113-118,6.
退火温度对In2O3(ZnO)m超晶格纳米线的拉曼光谱的影响
Effect of Annealing Temperature on Raman Spectra of In2O3(ZnO)m Superlattice Nanowires
李凯 1温静 1赵振宇1
作者信息
- 1. 哈尔滨师范大学物理与电子工程学院,光电带隙材料省部共建教育部重点实验室,哈尔滨150025
- 折叠
摘要
Abstract
In2O3(ZnO)m superlattice nanowires were synthesized via a chemical vapor deposition method. The scanning electron microscopy images showed that the as-synthesized IZO nanowires cover all the substrate. Their diameter is about 80-100 nm, and the length about 15-25 μm. Detailed microstructures of as-synthesized nanowires were characterized by high-resolution transmission electron microscopy (HRTEM). The results show that the IZO superlattice nanowire is consist of In-O layer and In/Zn-O block stacking alternately along the < 0001 > direction. The nanowires were annealed at different temperature and studied by Raman scattering techniques. The results show that Vo and Zni of the nanowires decreased as the temperature increasing, AM and A1(LO) gradually shift to 571 cm-1 and 619 cm-1, respectively, the symmetry enhanced. The Raman spectra show that annealing process improved the crystal quality of the IZO superlattice nanowires. The optimal annealing temperature is 1000 ℃.关键词
In2O3(ZnO)m/退火/拉曼散射Key words
In2O3(ZnO)m/ annealing/ Raman scattering分类
信息技术与安全科学引用本文复制引用
李凯,温静,赵振宇..退火温度对In2O3(ZnO)m超晶格纳米线的拉曼光谱的影响[J].人工晶体学报,2013,42(1):113-118,6.
