人工晶体学报2013，Vol.42Issue(1)：186-191,6.
共溅射NixZn1-xO薄膜的结构、磁性和电性能
Structure, Magnetic and Electrical Properties of NixZn1-xO Co-sputtering Films
摘要
Abstract
The NixZn1-x O(x=0.78,0.72,0.68)films were fabricated by RF co-sputtering method. The samples presenced amorphous phase and a small amount of NiO crystalline phase. The samples had manifest ferromagnetism at room temperature. The saturation magnetization Ms of Ni0.78 Zn0.22 O film reached to 65 emu/cm3 after annealed (TA =803 K), corresponding to a single Ni ion magnetic moment greater than 0. 13 μB. Due to metal-insulator transitions, the as-sputtered films appeared resistivity minimum phenomenon at low-temperature.关键词
射频共溅射/NiZnO/铁磁性/电阻率Key words
RF co-sputtering/ NiZnO/ ferromagnetism/ resistivity分类
数理科学引用本文复制引用
王锋,黄鹏飞..共溅射NixZn1-xO薄膜的结构、磁性和电性能[J].人工晶体学报,2013,42(1):186-191,6.基金项目
福建省自然科学基金(2010J01305,E0510027)资助项目 （2010J01305,E0510027）
福建省教育厅A类科技项目(JA12283) （JA12283）
泉州市科技项目计划(2009G82012Z105) （2009G82012Z105）
福建省高校服务海西建设重点项目(A100) （A100）
