物理学报2013，Vol.62Issue(1)：393-398,6.DOI:10.7498/aps.62.017202
二氧化钒薄膜低温制备及其太赫兹调制特性研究
VO2 low temperature deposition and terahertz transmission modulation
摘要
Abstract
Recently, the applications of vanadium dioxide film (VO2) in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with (011) preferred orientation and compact nanostruc-ture. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VO2/BK7 can be widely used for THz devices such as modulators and switches.关键词
二氧化钒薄膜/太赫兹波/绝缘体-金属相变/调制Key words
vanadium dioxide film/ terahertz/ phase transition/ modulation引用本文复制引用
孙丹丹,陈智,文岐业,邱东鸿,赖伟恩,董凯,赵碧辉,张怀武..二氧化钒薄膜低温制备及其太赫兹调制特性研究[J].物理学报,2013,62(1):393-398,6.基金项目
国家自然科学基金重点项目(批准号:61131005,61021061)、教育部科学技术研究重大项目(批准号:313013)、教育部新世纪优秀人才资助计划(批准号:NCET-11-0068)、四川省杰出青年学术技术带头人计划(批准号:2011JQ0001)、四川省国际科技合作项目(批准号:2010HH0026)和中央高校基本科研业务费(批准号:ZYGX2010J034)资助的课题. （批准号:61131005,61021061）
