物理学报2013，Vol.62Issue(1)：467-471,5.DOI:10.7498/aps.62.018101
室温生长ZnO薄膜晶体管的紫外响应特性
Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature
摘要
Abstract
Transparent thin-film transistor (TFT) with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel.关键词
ZnO/薄膜晶体管/紫外响应/残余电导Key words
ZnO/ thin film transistors/ ultraviolet photoresponse/ residual conductivity引用本文复制引用
吴萍,张杰,李喜峰,陈凌翔,汪雷,吕建国..室温生长ZnO薄膜晶体管的紫外响应特性[J].物理学报,2013,62(1):467-471,5.基金项目
国家自然科学基金(批准号:51002131)和上海大学新型显示技术及应用集成教育部重点实验室(批准号:P201005)资助的课题. （批准号:51002131）
