现代电子技术2013，Vol.36Issue(4)：127-129,3.
一种Ka波段PHEMT单片集成功率放大器设计
Design of novel Ka-band PHEMT monolithic integrated power amplifier
李彩红1
作者信息
- 1. 广东交通职业技术学院,广东广州510650
- 折叠
摘要
Abstract
A Ka-band monolithic integrated power amplifier working at 29 GHz～31 GHz was designed with WIN Semicon-ductor Corporation's 0.15 μm PHEMT technology. The RC parallel network is adopted in this paper to achieve the stability of the whole circuit. Three stage amplifier can meet the power gain of 27 dB at 30 GHz. The compression power output of 1 dB at 30 GHz is 30 dBm, input VSWR is less than 1.5, and power additional efficiency is 35%. The circuit runs at 6 V power sup-ply. The total size of the chip is 2.30 mm × 1.23 mm. Through the simulation, it is concluded that at 30 GHz, PUB output power reaches 30.4 dBm, PAE is 35%, the input standing wave ratio is 1.26, and the power gain is about 27 db. The stability coeffi-cient inside the whole frequency band is far more than 1. The whole circuit realizes the unconditional stability by RC parallel sta-bilization network and meets the design requirements.关键词
Ka波段/PHEMT/MMIC/功率放大器Key words
Ka-band/PHEMT/MMIC/power amplifier分类
信息技术与安全科学引用本文复制引用
李彩红..一种Ka波段PHEMT单片集成功率放大器设计[J].现代电子技术,2013,36(4):127-129,3.
