液晶与显示2013，Vol.28Issue(1)：55-58,4.DOI:10.3788/YJYXS20132801.0055
采用不同透明电极的非晶铟镓锌氧化物薄膜晶体管
Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes
摘要
Abstract
Amorphous InGaZnO thin film transistors with bottom gate structure using transparent materials ITO and AZO as drain/source electrodes were fabricated by RF sputtering at room temperature. It was found that the fabricated TFTs exhibited good performance. For TFTs with AZO as electrodes,field effect mobility of 1. 95 cm/V · s,and on-off ratio of 4. 53×105 ,as well as a threshold voltage shift of 4. 49 V under positive bias stressing were achieved.关键词
薄膜晶体管/透明电极/非晶铟镓锌氧化物Key words
thin film transistors/ transparent electrodes/ amorphous InGaZnO分类
信息技术与安全科学引用本文复制引用
詹润泽,谢汉萍,董承远..采用不同透明电极的非晶铟镓锌氧化物薄膜晶体管[J].液晶与显示,2013,28(1):55-58,4.基金项目
国家自然科学基金(No.61136004) （No.61136004）
上海市自然科学基金项目(No.09ZR1414800) （No.09ZR1414800）
