南阳师范学院学报2012，Vol.11Issue(12)：30-35,6.
高质量超薄SGOI衬底材料的制备新方法
A new fabrication method of ultra-thin SGOI with high crystal quality
摘要
Abstract
A modified post-annealing at 1000 ℃ in N2 ambient was carried out to improve the Ge distribution in the SiGe layer fabricated by the Ge condensation process, which is a potential technique for strained Si fabrication. Three kinds of SiGe-on-insulator (SGOI) samples were fabricated by so-called Ge condensation, which was the oxidation of the SiGe layer on an insulator to enhance the Ge fraction. After different post-annealing processes and the necessary cleaning steps, 20-nm-thick strained Si films were epitaxially grown on them. Though the differences of surface topography among the three samples are not great, the one with the modified post-annealing process has the most uniform Ge element distribution and the least misfit dislocations. Meanwhile, the strain values obtained by Raman spectra are coherent with the Ge fraction in SiGe near the Si/SiGe interface and the sample with the modified post-annealing process has a larger strain value than the one with a conventional post-an- nealing.关键词
绝缘体上的锗硅/锗浓缩/应变Key words
SiGe-On-Insulator (SGOI)/Ge condensation/strained Si分类
信息技术与安全科学引用本文复制引用
刘旭焱,王爱华,蒋华龙,周大伟..高质量超薄SGOI衬底材料的制备新方法[J].南阳师范学院学报,2012,11(12):30-35,6.基金项目
河南省自然科学基金项目 （）
南阳师院科研启动项目 （）
