物理学报2012，Vol.61Issue(22)：167-172,6.
偏置条件对SOINMOS器件总剂量辐照效应的影响
The total dose irradiation effects of SOI NMOS devices under different bias conditions
摘要
Abstract
Based on 0.8 pm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.关键词
总剂量辐照效应/泄漏电流/栅偏置条件/碰撞电离Key words
total dose effect/leakage current/gate bias/impact ionization分类
信息技术与安全科学引用本文复制引用
卓青青,刘红侠,杨兆年,蔡惠民,郝跃..偏置条件对SOINMOS器件总剂量辐照效应的影响[J].物理学报,2012,61(22):167-172,6.基金项目
国家自然科学基金（批准号：61076097,60936005）,教育部科技创新工程重大项目培育资金（批准号：708083）和中央高校基本科研业务费专项资金（批准号：200110203110012）资助的课题. （）
