物理学报2012，Vol.61Issue(22)：395-401,7.
Si衬底上生长的MnSi薄膜和MnSi1．7纳米线的STM和XPS分析
Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates
摘要
Abstract
Manganese silicides are promising industrial materials in optoelectronics and microelectronics fields. The study of electronic structures of manganese silicide film and nanowires is essential for a deeper understanding of their properties. In this paper, MnSi film and MnSil.7 nanowires are prepared by molecular beam epitaxy method, and then observed by scanning tunneling microscopy (STM). The Mn 2p and Si 2p of MnSi film and MnSil. 7 nanowires are comprehensively studied using X-ray photoelectron spectroscopy (XPS). The results demonstrate that MnSi film with ,-0.9 nm high is /3×/3 reconstruction, and that the MnSi1.7 nanowires are about ,-3 nm high, 16--18 nm wide and 500---1500 nm long. The binding energies of the Mn 2pl/2 level and Mn 2pa/2 level for MnSi film are 649.7 and 638.7 eV, respectively, which coincide with those of MnSil.7 nanowires. The Mn 2p3/2 and Mn 2pt/2 peaks which are located at 640----645 eV and ~653.8 eV indicate that an oxide layer formed on the surfaces of film and nanowires because of short-time exposure to the atmosphere. The negative chemical shifts for MnSi film and MnSil.7 nanowires from Si2p spectra indicate that with the formation of manganese silicides, the chemical state of Si is changed.关键词
X射线光电子能谱/扫描隧道显微镜/纳米线/薄膜Key words
X-ray photoelectron spectroscopy (XPS)/scanning tunneling microscopy (STM)/nanowires/film分类
数理科学引用本文复制引用
石高明,邹志强,孙立民,李玮聪,刘晓勇..Si衬底上生长的MnSi薄膜和MnSi1．7纳米线的STM和XPS分析[J].物理学报,2012,61(22):395-401,7.基金项目
国家自然科学基金（批准号：61176017）和上海市教育委员会科研创新项目（批准号：12ZZ025）资助的课题. （）
