物理学报2012，Vol.61Issue(24)：125-130,6.
栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究
Gate length dependence of SOI NMOS device response to total dose irradiation
摘要
Abstract
The gate length dependence of PD SOI NMOS device on total dose irradiation is investigated, which is exposed to 60Coγgamma ray at a dose rate of 50 rad(Si)/s. The result shows that the transistor with shorter gate length shows larger radiation-induced interface trap density, which leads to the maximum transconductance degradation. The local floating body effect induces the output characteristic variation of irradiated MOSFET with gate length. After irradiation, the breakdown voltage of short channel SOI device decreases. Due to the buried oxide, the radiation-induced degradation of short channel SOI device is much serious compared with that of long channel SO1 device.关键词
PD/SOI/NMOS/总剂量辐照效应/栅长/偏置状态Key words
PD SOI NMOS/total ionizing dose/gate length/bias state分类
信息技术与安全科学引用本文复制引用
彭里,卓青青,刘红侠,蔡惠民..栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究[J].物理学报,2012,61(24):125-130,6.基金项目
国家自然科学基金（批准号：61076097,60936005）、教育部科技创新工程重大项目培育资金（批准号：708083）和中央高校基本科研业务费专项资金（批准号：20110203110012）资助的课题. （）
