物理学报2012，Vol.61Issue(24)：496-504,9.
磁控溅射法制备β型Fe3Si8M系三元薄膜
β-Fe3SisM ternary alloy thin films prepared by magnetron sputtering
摘要
Abstract
β-FeSi2 is a promising environment-friendly semiconductor material. However it is difficult to obtain pure phase tbr such a line compound. To investigate the solubilities for a third alloying elements, in this work Fe3Si8M (M = B, Cr, Ni, Co) ternary alloys are designed based on the cluster-plus-glue-atom-modek Thin films are then prepared using magnetron sputtering. The as-deposited films are all amorphous and become crystallized after annealing at 850° for 4 h. It is shown that samples alloyed with third components Cr and B can reach single β phase easily. However, the main phase is a phase and the fihns tend to exhibit metallic characteristics while alloyed with Co. Of these films, the Fe2.7Si8.4B0.9 film presents the most prominent semiconductor performance, and it has a resistivity of 0.17 Ω.cm, a sheet carrier concentration of 2.8 × 10^20 cm -3, a mobility of 0.13 cm2/V.s and a band-gap width of 0.65 eV. It is confirmed that doping a proper third component can expand the 13 phase zone, exhibiting a similar semiconductor property to that of binary β-FeSi2.关键词
β-FeSi2/磁控溅射/非晶薄膜/半导体Key words
β-FeSi2/magnetron sputtering/amorphous film/semiconductor分类
数理科学引用本文复制引用
李晓娜,郑月红,李胜斌,董闯..磁控溅射法制备β型Fe3Si8M系三元薄膜[J].物理学报,2012,61(24):496-504,9.基金项目
辽宁省教育厅高校重点实验室项目（批准号：2008S051）和大连理工大学基本科研业务费专项项目资助的课题. （）
