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基于光照强度的PIN光电二极管响应时间分析

初宁 曹立军 黄威

传感技术学报2013,Vol.26Issue(1):34-37,4.
传感技术学报2013,Vol.26Issue(1):34-37,4.DOI:10.3969/j.issn.1004-1699.2013.01.008

基于光照强度的PIN光电二极管响应时间分析

The Response Time Analysis of PIN Photodiode Based on Light intensity

初宁 1曹立军 1黄威1

作者信息

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摘要

Abstract

In the PIN photodiode applications,we found that the intensity of illumination has a major effect on the response speed. In this paper,the effect of light intensity and the response speed relation was discussed in detailed. It presents an internal PIN junction equivalent electric field model, and sets an experimental circuit of PIN photodiode under different light intensity to detect the response speed. Response time will be shorter when lighting and the response time will be longer when stopping lighting in highlight. The result gives a basis for high speed application in PIN photodiode, and it is helpful for further improving PIN photodiode response speed.

关键词

光电二极管/响应速度/结等效模型/光照强度

Key words

photodiode/response speed/response time/PIN junction equivalent model/light intensity

引用本文复制引用

初宁,曹立军,黄威..基于光照强度的PIN光电二极管响应时间分析[J].传感技术学报,2013,26(1):34-37,4.

基金项目

山东省科技攻关计划资助(2009GG10004012) (2009GG10004012)

传感技术学报

OA北大核心CSCDCSTPCD

1004-1699

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