金刚石与磨料磨具工程2013，Vol.33Issue(1)：23-25,30,4.
ECR等离子体刻蚀CVD金刚石膜的研究
Study on etching chemical vapor deposition diamond film by electron cyclotron resonance plasma
摘要
Abstract
CVD diamond films were etched by plasma on a self-developed electron cyclotron resonance (ECR) device. Influences of substrate temperature, working pressure and magnetic field configuration on etching effect were studied. Results showed that the top of the grain on CVD film was etched preferentially and that the- surface roughness Ra was reduced. The higher substrate temperature (150 ℃ compared with 20 ℃ ) , the lower working pressure (2 X 10-3 Pa compared with 3 X 10-2 Pa) , and the stronger magnetic field strength (0.2 T compared with 0. 15 T) contributed to a better etching effect.关键词
ECR等离子体/CVD金刚石膜/刻蚀/基片温度/工作气压/磁场位形Key words
electron cyclotron resonance ( ECR) plasma/chemical vapor deposition ( CVD ) diamond film/etching/substrate temperature/working pressure/magnetic field configuration分类
化学化工引用本文复制引用
潘鑫,马志斌,吴俊..ECR等离子体刻蚀CVD金刚石膜的研究[J].金刚石与磨料磨具工程,2013,33(1):23-25,30,4.基金项目
国家自然科学基金资助项目(10875093) （10875093）
