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磁控溅射法制备非晶IGZO透明导电薄膜

梁朝旭 李帅帅 王雪霞 李延辉 宋淑梅 杨田林

人工晶体学报2013,Vol.42Issue(2):226-229,245,5.
人工晶体学报2013,Vol.42Issue(2):226-229,245,5.

磁控溅射法制备非晶IGZO透明导电薄膜

Preparation of IGZO Amorphous Transparent Conductive Thin Films by RF Magnetron Sputtering

梁朝旭 1李帅帅 1王雪霞 1李延辉 1宋淑梅 1杨田林1

作者信息

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摘要

Abstract

IGZO thin films were prepared on glass substrates by RF magnetron sputtering, and the properties of IGZO films and deposition condition were studied. The influence of sputtering power on structural, electrical and optical characteristics was discussed. The merit figure (FTC) for revaluing transparent electrodes can reach to 1. 94 × 10 -3 Ω-1 for IGZO films deposited at power 50 W. The corresponding resistivity and average transmittance are 2.6 × 10 -3 Ω·cm and 87.2%.

关键词

磁控溅射/IGZO/非晶薄膜/透明导电膜

Key words

magnetron sputtering/IGZO/amorphous thin films/transparent conductive thin films

分类

信息技术与安全科学

引用本文复制引用

梁朝旭,李帅帅,王雪霞,李延辉,宋淑梅,杨田林..磁控溅射法制备非晶IGZO透明导电薄膜[J].人工晶体学报,2013,42(2):226-229,245,5.

基金项目

山东省自然科学基金(ZR2009AM020) (ZR2009AM020)

山东大学自主创新基金(2011ZRXT002,2011ZRYQ010) (2011ZRXT002,2011ZRYQ010)

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

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