安徽大学学报（自然科学版）2013，Vol.37Issue(2)：45-50,6.DOI:10.3969/j.issn.1000-2162.2013.02.009
沉积电位对ZnO薄膜结构及光电性能的影响
Influence of deposition potential on structure and optoelectronic properties of ZnO thin films
摘要
Abstract
ZnO thin dims were prepared by cayhodic electrochemic deposition method on ITO substrate, the Zn(NO3)2 solution was used as electrolyte. The ZnO thin films were characterized by X-ray diffraction and scanning electron microscopy, the optoelectronic properties of ZnO thin films were studied. The results showed that the ZnO thin films were nanorod with wurtzite structure. When the deposition voltages were -0.75,-0. 80,-0. 85 V, the band gap and the photocurrent density of the ZnO thin films were 3. 12,3.27,3.29 eV and 1.18,1.07,0. 89 μA · cm 2,respectively.关键词
ZnO薄膜/电沉积/沉积电位/禁带宽度/光电性能Key words
ZnO thin films/electrodeposition/deposition potential/band gap/optoelectronic?property分类
数理科学引用本文复制引用
孙兆奇,徐凯,杨蕾,石市委,张苗,宋学萍..沉积电位对ZnO薄膜结构及光电性能的影响[J].安徽大学学报（自然科学版）,2013,37(2):45-50,6.基金项目
国家自然科学基金资助项目(51272001,51072001) （51272001,51072001）
教育部留学归国人员中央部门专项基金资助项目 （）
