电子器件2013，Vol.36Issue(1)：64-67,4.DOI:10.3969/j.issn.1005-9490.2013.01.015
X波段低噪声放大器设计
Design of X-Band Low Noise Amplifier
摘要
Abstract
It was difficult to choose circuit topology of X-band low noise amplifier,so an amplifier was designed and simulated. This amplifier,using NEC's NE3210S01 ,had a micro-strip impedance converting matching structure and a three-stage cascade topology. The ADS software was used as a tool to design, optimize and simulate. The designed amplifier exhibited broadband operation from 9. 2 GHz ~9. 6 GHz with noise figure less than 1. 7 dB,band gain 33. 5 dB,band gain flatness less than 0. 3 dB and VSWR less than 1.5. The amplifier has been applied to the X-band receiver with good results. The method of design can be refered for engineering.关键词
低噪声放大器/增益/噪声系数/驻波比Key words
low noise amplifier/gain/noise figure/VSWR分类
信息技术与安全科学引用本文复制引用
马万雄,陈昌明,张川..X波段低噪声放大器设计[J].电子器件,2013,36(1):64-67,4.
