厦门大学学报（自然科学版）2013，Vol.52Issue(2)：165-171,7.DOI:10.6043/j.issn.0438-0479.2013.02.005
基于干湿法活化相结合的硅-硅低温键合
Study on Low-temperature Si-Si Bonding Based on Combination of Dry and Wet Activation Methods
摘要
Abstract
Aimed at the traditional low-temperature silicon bonding methods, this article proposed another silicon direct bonding method combining the wet processes of activation with plasma dry of activation. A fine bonding quality can be achieved using the parameters of 90 s plasma activation time and 1 500 N prebonding pressure acquired by the process parameter experiment. Then a comparison experiment between this method and both the only dry and wet activation methods was presented. The consequence shows that this combination method can effectively avoid cavities that can be produced while using dry activation method after annealing,and a high bonding strength can be achieved at the same time. Subsequence application requirement can be meted in this way. At last, based on this combination of dry and wet activation method, the bonding of silicon and silicon with the hermetic cavity was realized making up for the limitation of wet activation method's application.关键词
微机电系统(MEMS)/低温键合/直接键合/等离子体活化Key words
MEMS/low-temperature bonding/direct bonding/plasma activation分类
信息技术与安全科学引用本文复制引用
王凌云,王申,陈丹儿,梁楚尉,周如海,蔡建法,杜晓辉..基于干湿法活化相结合的硅-硅低温键合[J].厦门大学学报（自然科学版）,2013,52(2):165-171,7.基金项目
航空科学基金项目(20110868001) （20110868001）
惯性技术航空科技重点实验室资助项目 （）
