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直流反应磁控溅射制备a-C:H薄膜及其表面粗糙度研究

张艳茹 杭凌侠 郭峰 宁晓阳

表面技术2013,Vol.42Issue(2):92-94,121,4.
表面技术2013,Vol.42Issue(2):92-94,121,4.

直流反应磁控溅射制备a-C:H薄膜及其表面粗糙度研究

Study on Deposition of a-C:H Film by Reactive DC Magnetron Sputtering and Its Surface Roughness

张艳茹 1杭凌侠 1郭峰 1宁晓阳1

作者信息

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摘要

Abstract

The -CH3 atoms methane gas was filled to study the preparation and performance of the hydrogen-containing DLC(a-C:H) thin film. At different CH4/Ar flow ratio condition, the a-C:H was deposited on the N type silicon substrate. By means of ellipsometer, the non-contact white light interferometer as well as the laser wave interferometer, the deposition rate and surface roughness were lucubrated. Experiment results show that the deposition rate of the diamond-like carbon thin film is enhanced by the addition of the hydrogen-containing carbon gas and the surface flatness is also improved.

关键词

直流反应磁控溅射/含氢类金刚石薄膜/沉积速率/表面粗糙度

Key words

reactive DC magnetron sputtering/ DLC films with various hydrogen contents/ deposition rate/ surface roughness

分类

矿业与冶金

引用本文复制引用

张艳茹,杭凌侠,郭峰,宁晓阳..直流反应磁控溅射制备a-C:H薄膜及其表面粗糙度研究[J].表面技术,2013,42(2):92-94,121,4.

基金项目

陕西省教育厅科学研究计划项目(12JK0433) (12JK0433)

表面技术

OA北大核心CSCDCSTPCD

1001-3660

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