传感技术学报2013，Vol.26Issue(2)：191-194,4.DOI:10.3969/j.issn.1004-1699.2013.02.010
Notching效应在MEMS风速仪制造工艺中的应用
Application of Notching Effect in The Fabrication Process of MEMS Anemometer
摘要
Abstract
Deep reactive ion etching is widely used in modern silicon micro-mechanical manufacture with high aspect ratio of etched features. During the DRIE of SOI wafer, an adverse reaction to etching rate and profile shape named "Notching effect" occurred. We take advantage of the "Notching effect" to fabricate an anemometer with suspended silicon sensing element. In our design, by some simple design rules, sacrificial silicon islands are placed near to the sensitive structures to release it by"Notching effect". Typical time constant measured for the sensor was 1.08 μs and the Temperature Coefficient of Resistant(TCR)value of the sensing element was measured to be 4 738×10-6/℃. For certain micromechanical applications, as described in this paper, "Notching effect "can be turned into an advantage to improve the variability of the fabrication process.关键词
MEMS风速仪/悬空硅/横向刻蚀效应/深反应离子刻蚀Key words
MEMS anemometer/ suspended silicon/ notching effect/ deep reactive ion etching (DRIE)分类
信息技术与安全科学引用本文复制引用
常洪龙,周平伟,谢建兵,杨勇,谢中建,袁广民..Notching效应在MEMS风速仪制造工艺中的应用[J].传感技术学报,2013,26(2):191-194,4.基金项目
国家自然科学基金项目(61273052) （61273052）
安全技术交通行业重点实验室开放课题项目 （）
