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金属基Pt/ITO薄膜热电偶的制备

赵文雅 蒋洪川 陈寅之 张万里 刘兴钊 彭少龙 唐磊

测控技术2013,Vol.32Issue(4):23-25,3.
测控技术2013,Vol.32Issue(4):23-25,3.

金属基Pt/ITO薄膜热电偶的制备

Fabrication of Pt/ITO Thin-Film Thermocouple on Metal Substrates

赵文雅 1蒋洪川 1陈寅之 1张万里 1刘兴钊 1彭少龙 1唐磊1

作者信息

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摘要

Abstract

The Pt/ITO thin-film thermocouples with multilayer structure are fabricated on metal substrates. The thin-film thermocouple is composed of Ni-base alloy substrate, NiCrAlY buffer layer, thermal growth A12O3 layer, A12O3 insulating layer, Pt/ITO function layer and A12O3 protective layer. The results of the static calibration of the sample show that the average Seebeck coefficient is about 107.45 μV /℃. The test temperature can be up to 1000℃. The thermoelectric power of the sample can be effectively improved by aging treatment.

关键词

Pt/ITO薄膜热电偶/静态标定/热电势/塞贝克系数

Key words

Pt/ITO thin-film thermocouples/ static calibration/ thermoelectric power/ Seebeck coefficient

分类

信息技术与安全科学

引用本文复制引用

赵文雅,蒋洪川,陈寅之,张万里,刘兴钊,彭少龙,唐磊..金属基Pt/ITO薄膜热电偶的制备[J].测控技术,2013,32(4):23-25,3.

基金项目

国防预研基金资助项目(51312050405) (51312050405)

测控技术

OA北大核心CSCDCSTPCD

1000-8829

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